ATOMIC LAYER EPITAXY OF CDTE, MGTE AND MNTE GROWTH OF CDTE MNTE TILTED SUPERLATTICES ON VICINAL SURFACES/

Atomic layer epitaxy (ALE) is investigated for binary semiconductors o f the telluride family, namely CdTe, MgTe and MnTe. Thanks to a system atic reflection high energy electron diffraction (RHEED) study, an aut oregulated growth at 0.5 monolayer/ALE cycle is obtained for CdTe in a substrate temperature range between 260 degrees C and 290 degrees C. RHEED studies on MgTe ALE, together with X-ray diffraction experiments on ALE grown CdTe/MgTe superlattices, reveal that an autoregulated gr owth at 0.7 +/- 0.1 MgTe monolayer/ALE cycle can be achieved in a subs trate temperature range between 260 and 300 degrees C. For MnTe, all d eposited Mn atoms get incorporated, so that no autoregulated growth ca n be achieved, as illustrated by transmission electron microscopy (TEM ) data on ALE grown CdTe/MnTe superlattices. Finally, all this know-ho w is used to epitaxy CdTe/MnTe tilted superlattices onto (001) CdZnTe vicinal surfaces.