INSERTION OF ALE GROWN ZNTE MONOMOLECULAR FILMS IN CDTE CDZNTE HETEROSTRUCTURES TO PROBE THE QUANTUM-WELL EIGENSTATES/

A local probe, such as a localized isoelectronic perturbation, was use d to measure the spatial variation of the probability densities in the first two excitonic states of a CdTe/CdZnTe quantum well (QW). One mo nolayer thick ZnTe planar probes were located either in the center of CdTe/CdZnTe QWs, or at one third and two third of the width of the QWs by atomic layer epitaxy which allows to control exactly both the amou nt of zinc incorporated and its position inside the QW width. Photolum inescence and reflectivity measurements at low temperature were used t o determine the energy position and shift in energy of both the excito nic ground state e(1)h(1) and the first excited one e(2)h(2) when comp ared to a reference sample without ZnTe insertion. The results obtaine d are supported quantitatively by a calculation.