MODIFYING ALE GROWN IN2O3 FILMS BY BENZOYL FLUORIDE PULSES

Indium oxide thin films grown at 500 degrees C by atomic layer epitaxy from InCl3 and water were modified by benzoyl fluoride pulses. A broa d minimum in resistivity was found when the number of the benzoyl fluo ride containing cycles were 6-15% of total. The lowest resistivities w ere 4-5 X 10(-4) Omega cm. Fluorine contents studied by nuclear resona nce broadening method were below 0.02 at% in all the films, which is f ar too low to explain the measured carrier concentrations 2-3 X 10(20) cm(-3) This leads to an assumption that rather than acting as a fluor ine source, the benzoyl fluoride modifies the In2O3 structure creating additional oxygen vacancies which serve as sources of the charge carr iers. The films had cubic In2O3 structure and optical transparencies o ver 90%.