THE ELECTRICAL-FIELD EFFECT ON THE GROWTH OF TITANIUM-OXIDE LAYERS BYML-ALE

Study of the electric field effect on the titanium oxide growth by mol ecular layering (ML)-atomic layer epitaxy (ALE) method was produced in the present work. It was found that electric field effect on the adso rption process of the precursors during ML-ALE cycles under both polar ities of a field. The field affect depended on a stage of a cycle ML-A LE (half-reaction of ML-ALE). The strength of a field strongly influen ced on the thickness of titanium oxide layers in the beginning of a gr owth process until the layer thickness reached 5.0-6.0 nm. It was foun d that field influence did not depend on a sublayer composition. The e lectric field affect at different temperatures and voltages was studie d. It was found that electric field effected a structure of the synthe sized layers. At room temperature we synthesized a rutile structure - the more thermodynamically stable modification of titanium oxide. The explanation of these results was made on the basis of an electronic ad sorption theory.