SYNTHESIS AND INVESTIGATION OF HETEROOXIDES BY ML-ALE METHOD

The investigation of MIS structures on silicon substrate grown by a mo lecular layering (ML)-atomic layer epitaxy (ALE) method has been descr ibed. Insulators consisting of an aluminum oxide matrix with 4 monolay ers of heterooxides in their bulk were grown as a model of the charge trapping centers. Electrical characteristics of these samples were mea sured by a C-V technique. The value and the sign of the charge trappin g centers were determined by growth conditions and post annealing. Kin etics of charge trapping in the heterooxides showed a strong dependenc e on the location of heterooxides in an aluminum oxide matrix. The lar est value of a charge was obtained in the samples with heterooxides i ntroduced to the matrix close to the silicon-insulator interface. As t he intrinsic capture centers in aluminum oxide showed no traps at 77 K , heterooxides actually captured the charge.