SYNTHESIS AND INVESTIGATION OF HETEROOXIDES BY ML-ALE METHOD

Citation
Ve. Drozd et al., SYNTHESIS AND INVESTIGATION OF HETEROOXIDES BY ML-ALE METHOD, Applied surface science, 112, 1997, pp. 264-268
Citations number
5
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
112
Year of publication
1997
Pages
264 - 268
Database
ISI
SICI code
0169-4332(1997)112:<264:SAIOHB>2.0.ZU;2-7
Abstract
The investigation of MIS structures on silicon substrate grown by a mo lecular layering (ML)-atomic layer epitaxy (ALE) method has been descr ibed. Insulators consisting of an aluminum oxide matrix with 4 monolay ers of heterooxides in their bulk were grown as a model of the charge trapping centers. Electrical characteristics of these samples were mea sured by a C-V technique. The value and the sign of the charge trappin g centers were determined by growth conditions and post annealing. Kin etics of charge trapping in the heterooxides showed a strong dependenc e on the location of heterooxides in an aluminum oxide matrix. The lar est value of a charge was obtained in the samples with heterooxides i ntroduced to the matrix close to the silicon-insulator interface. As t he intrinsic capture centers in aluminum oxide showed no traps at 77 K , heterooxides actually captured the charge.