The investigation of the molecular layering (ML)-ALE synthesis of the
SiO2 nanolayers on the Si substrate was performed by use of IR multipl
e transmission spectroscopy, ellipsometry and contact angle measuremen
ts. SiCl4 and H2O were used as precursors. The correlation between str
ucture of the native oxide on the Si surface, contact angle and the co
verage of the surface by the SiO4/2 tetrahedrons was established. The
affect of the composition and the thickness of the SiO2 layer, as well
as its hydroxylation, on the kinetics of the SiO2 layers growth was f
ound.