STUDY OF THE SIO2 LAYER GROWTH BY THE ML-ALE METHOD

The investigation of the molecular layering (ML)-ALE synthesis of the SiO2 nanolayers on the Si substrate was performed by use of IR multipl e transmission spectroscopy, ellipsometry and contact angle measuremen ts. SiCl4 and H2O were used as precursors. The correlation between str ucture of the native oxide on the Si surface, contact angle and the co verage of the surface by the SiO4/2 tetrahedrons was established. The affect of the composition and the thickness of the SiO2 layer, as well as its hydroxylation, on the kinetics of the SiO2 layers growth was f ound.