A. Gheorghiu et al., LOCAL ATOMIC CONFIGURATION IN LASER SYNTHESIZED SI C/N POWDERS STUDIED BY X-RAY PHOTOELECTRON-SPECTROSCOPY/, Journal de physique. III, 7(3), 1997, pp. 529-535
Citations number
19
Categorie Soggetti
Material Science","Phsycs, Fluid & Plasmas","Physics, Applied
Nanometric Si/C/N powders have been obtained from the laser synthesis
of a liquid precursor: hexamethydisilazane. The chemical composition o
f the products is a function of the experimental parameters: the C/N r
atio in the powders is controlled in the range 0.34 to 1.34 by varying
the ammonia content in the flowing gas (argon). This paper presents s
ome results obtained by X-ray Photoelectron Spectroscopy (XPS) about t
he local atomic structure of these powders. The evolution of the powde
rs after annealing treatments at 1500 and 1600 degrees C under nitroge
n atmosphere has been studied. The chemical composition deduced from X
PS wide spectra are compared with chemical analysis. From the analysis
of the Si-2p core level, information about the local atomic bonding a
round silicon atoms are obtained. The different environments present i
n the system and their evolution with temperature have been deduced fr
om the comparison with data obtained for stoichiometric compounds (SiC
, Si3N4 and SiO2). The existence of local chemical disorder is shown i
n the as-formed powders. For powders with C/N approximate to 0.6, the
samples remains amorphous until 1500 degrees C; crystallization which
starts around 1500 degrees C is total at 1600 degrees C. The existence
of C-N bonds at 1500 and 1600 degrees C is evidenced. This result is
in good agreement with results obtained by neutron diffraction and X-r
ay absorption (XAS).