SMART-CUT(R) - THE BASIC FABRICATION UNIBOND(R) SOI WAFERS

The advantage of SOI wafers for device manufacture has been widely stu died. To be a real challenger to bulk silicon, SOI producers have to o ffer SOI wafers in large volume and at low cost. The new Smart-Cut(R) SOI process used for the manufacture of the Unibond(R) SOI wafers answ ers most of the SOI wafer manufacturability issues. The use of Hydroge n implantation and wafer bonding technology is the best combination to get good uniformity and high quality for both the SOI and buried oxid e layer. In this paper, the Smart-Cut(R) process is described in detai l and material characteristics of Unibond(R) wafers such as crystallin e quality, surface roughness, thin film thickness homogeneity, and ele ctric behavior.