J. Hartwig et al., COMPARISON OF LATTICE-PARAMETERS OBTAINED FROM AN INTERNAL SILICON MONOCRYSTAL STANDARD, Physica status solidi. a, Applied research, 142(1), 1994, pp. 19-26
The lattice parameter of a highly perfect monocrystalline silicon samp
le is measured in six laboratories using three different diffraction m
ethods. The quality of the measurements and of the applied corrections
is already sufficiently high to compare lattice parameters measured b
y means of the used methods and CuKalpha radiation on an absolute scal
e with an accuracy of about DELTAa/a = 3 x 10(-6).