LASER-DEPOSITED PBTE(GA) FILMS

PbTe(Ga) films are obtained by the laser deposition technique from the two-phase alloy PbTe + GaTe. The GaTe content in the target is varied from 0.5 to 5 mol%. Electron diffraction, LIMS, SNMS, and Auger micro analysis are used for the investigation of the crystal structure and t he gallium distribution in the films. Electric and photoelectric prope rties are measured in the temperature interval from 4.2 to 300 K. The correlation between the composition of the growth melt, the film struc ture, and electric and photoelectric properties is established. The co mposition range in which the activation energy of conductivity of the films is close to that for high-ohmic bulk material (E(a) almost-equal -to 140 meV) is determined. For these films persistent photoconductivi ty at T less-than-or-equal-to 100 K is observed.