NUMERICAL-SIMULATION OF A METAL-SEMICONDUCTOR-METAL STRUCTURE WITH SCHOTTKY CONTACTS AT BOTH ENDS

Authors
HROMCOVA J DONOVAL D RACKO J
Citation
J. Hromcova et al., NUMERICAL-SIMULATION OF A METAL-SEMICONDUCTOR-METAL STRUCTURE WITH SCHOTTKY CONTACTS AT BOTH ENDS, Physica status solidi. a, Applied research, 142(1), 1994, pp. 167-175
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
142
Issue
1
Year of publication
1994
Pages
167 - 175
Database
ISI
SICI code
0031-8965(1994)142:1<167:NOAMSW>2.0.ZU;2-S
Abstract
New boundary conditions for the simulation of MSM structures with Scho ttky contacts at both ends are evaluated. They are based on the new in tegral equation for current density through an MSM structure where the quasi-neutral approximation at the reference contact is avoided. Whil e the reverse I-V characteristics are not affected, much better agreem ent between simulated and experimental characteristics is achieved in a wider range of forward applied voltages.