INFLUENCE OF THE INHOMOGENEOUS STRAIN RELAXATION ON THE OPTICAL-PROPERTIES OF ETCHED QUANTUM WIRES

Inhomogeneous strain relaxation in quantum wires etched from biaxially strained quantum wells is calculated. Characteristic features of the strain field are systematically discussed as a function of wire dimens ions and illustrated with various semiconductor systems either under c ompressive or tensile strain. We provide a general relaxation curve. T he shift of the band-gap energy in nanostructures due to the calculate d strain field is then predicted and compared to data obtained from op tical spectroscopy experiments.