DISLOCATION NUCLEATION RATES DURING SUBMONOLAYER GROWTH OF HETEROEPITAXIAL THIN-FILMS

Authors
HAMILTON JC
Citation
Jc. Hamilton, DISLOCATION NUCLEATION RATES DURING SUBMONOLAYER GROWTH OF HETEROEPITAXIAL THIN-FILMS, Physical review. B, Condensed matter, 55(12), 1997, pp. 7402-7405
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
55
Issue
12
Year of publication
1997
Pages
7402 - 7405
Database
ISI
SICI code
0163-1829(1997)55:12<7402:DNRDSG>2.0.ZU;2-G
Abstract
Dislocation nucleation rates during submonolayer heteroepitaxial islan d growth an calculated using a two-dimensional Frenkel-Kontorova (FK) model combined with transition-state theory. A method for determining effective FK adatom pair potentials is tested using embedded atom meth od (EAM) potentials. Calculated prefactors and activation energies for dislocation nucleation are in excellent agreement with values from a full EAM molecular-dynamics simulation demonstrating the validity of t his approach.