DISORDER-ORDER RIPENING OF C-60 ISLANDS

Citation
Yr. Ma et al., DISORDER-ORDER RIPENING OF C-60 ISLANDS, Physical review letters, 78(13), 1997, pp. 2588-2591
Citations number
19
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
78
Issue
13
Year of publication
1997
Pages
2588 - 2591
Database
ISI
SICI code
0031-9007(1997)78:13<2588:DROCI>2.0.ZU;2-K
Abstract
C-60 forms nonequilibrium disordered islands on the Si(110) surface wh ich progressively decay over several weeks. Over the same period order ed islands with a minimum height of three monolayers are observed to g row. This process has been monitored using an ultrahigh vacuum scannin g tunneling microscope operating at room temperature. We discuss these observations in terms of the van der Waals interaction between C-60 m olecules and argue that the initial formation of the disordered phase is kinetically driven.