K. Ounadjela et al., STRUCTURAL-CHANGES IN METASTABLE EPITAXIAL CO MN SUPERLATTICES/, Physical review. B, Condensed matter, 49(13), 1994, pp. 8561-8573
Single crystalline epitaxial Co/Mn superlattices have been grown on a
(0001) Ru buffer layer onto mica substrates. The evaporation of a seed
layer of 6 angstrom Mn is necessary to obtain a high-quality epitaxia
l growth. Reflection high-energy electron diffraction, x-ray diffracti
on, and ferromagnetic resonance experiments clearly show a modificatio
n of the Mn structure, when the thickness of the Mn interlayer increas
es. The Mn structure switches from a compact phase close to the fcc Mn
-gamma for few atomic planes, to a less compact one, probably a Laves
phase (MgCu2) which resembles Mn-alpha, for larger thicknesses of Mn.
This behavior induces a variation of the structure in the Co layers wh
ere the stacking changes from fcc to hcp. Up to six Mn atomic planes,
the Mn layers being highly strained, the stabilization of the fcc Mn a
nd Co metastable structures occurs via elastic and chemical interactio
ns. For larger Mn thicknesses, there is a trade-off between reduced st
rains and a higher density of epitaxial dislocations, leading to a low
er coherence between the Mn and Co layers. This leads the Mn and Co to
approach their bulk structure, Mn-alpha and hcp, respectively. Howeve
r, the chemical interactions between Co and Mn favor the fcc Co stacki
ng and consequently create a large density of stacking faults in the h
cp Co, even when the Mn is no longer close packed.