THE ALPHA-BETA TRANSFORMATION IN SILICON-NITRIDE SINGLE-CRYSTALS

Authors
SUEMATSU H MITOMO M MITCHELL TE PETROVIC JJ FUKUNAGA O OHASHI N
Citation
H. Suematsu et al., THE ALPHA-BETA TRANSFORMATION IN SILICON-NITRIDE SINGLE-CRYSTALS, Journal of the American Ceramic Society, 80(3), 1997, pp. 615-620
Citations number
22
Categorie Soggetti
Material Science, Ceramics
Journal title
Journal of the American Ceramic Society → ACNP
ISSN journal
00027820
Volume
80
Issue
3
Year of publication
1997
Pages
615 - 620
Database
ISI
SICI code
0002-7820(1997)80:3<615:TATISS>2.0.ZU;2-4
Abstract
Single crystals of alpha-Si3N4 were annealed at 2000 degrees-2150 degr ees C. The beta phase was detected after annealing at 2150 degrees C o nly when the crystals were surrounded by MgO . 3Al(2)O(3) or Y2O3 powd ers. On the other hand, no evidence of the alpha-beta transformation w as found when the crystals were annealed without additives. The soluti on-precipitation mechanism was concluded to be the dominant factor in the alpha-beta transformation of Si3N4.