P. Keblinski et al., ON THE THERMODYNAMIC STABILITY OF AMORPHOUS INTERGRANULAR FILMS IN COVALENT MATERIALS, Journal of the American Ceramic Society, 80(3), 1997, pp. 717-732
The thermodynamic origin, structure, and stability of the thin amorpho
us films commonly found in grain boundaries in covalent ceramics are i
nvestigated by molecular-dynamics simulation, To focus on the purely t
hermodynamic aspects, any kinetic effects associated with impurity-con
trolled interface chemistry are excluded by investigating pure silicon
(described by the Stillinger-Weber three-body potential), For this si
ngle-component covalent model material, we demonstrate that all high-e
nergy boundaries exhibit a universal amorphous structure, with a width
of similar to 0.25 nm, whereas low-energy boundaries are crystalline
and much sharper, We also demonstrate that introduction of an amorphou
s film into a crystalline interface lowers the excess energy to a leve
l similar to the energy of two bulk crystal-amorphous interfaces, The
competition between a narrow crystalline boundary structure and a wide
r amorphous boundary structure is shown to be governed by the relative
excess energies of the atoms in the grain boundaries and in the bulk
amorphous phase, These observations suggest that, in principle, amorph
ous grain-boundary films do not require impurities for their stabiliza
tion and that, as first proposed by Clarke, an equilibrium grain-bound
ary phase of uniform thickness can be the result of purely thermodynam
ic rather than kinetic factors.