CRYSTAL MORPHOLOGY AND GROWTH-RATE OF NAPHTHALENE IN VARIOUS PROCESSES INVOLVING SUPERCRITICAL CARBON-DIOXIDE

Authors
Citation
Cy. Tai et Cs. Cheng, CRYSTAL MORPHOLOGY AND GROWTH-RATE OF NAPHTHALENE IN VARIOUS PROCESSES INVOLVING SUPERCRITICAL CARBON-DIOXIDE, Chemical engineering research & design, 75(A2), 1997, pp. 228-232
Citations number
15
Categorie Soggetti
Engineering, Chemical
ISSN journal
02638762
Volume
75
Issue
A2
Year of publication
1997
Pages
228 - 232
Database
ISI
SICI code
0263-8762(1997)75:A2<228:CMAGON>2.0.ZU;2-Q
Abstract
An experimental apparatus was designed to investigate the crystal morp hology and growth rate of naphthalene crystals grown in various proces ses using supercritical carbon dioxide, including SCG (single crystal growth), SESS (slow expansion of supercritical solution), and RESS (ra pid expansion of supercritical solution). Photographs were taken to id entify crystal habits. The growth rates of naphthalene in the SCG and SESS processes were measured and compared with those in a RESS process .