PALLADIUM THIN-FILMS GROWN BY CVD FROM (1,1,1,5,5,5-HEXAFLUORO-2,4-PENTANEDIONATO) PALLADIUM(II)

The precursor (1,1,1,5,5,5-hexafluoro-2,4-pentanedionato) palladium(II ) [Pd(hfac)(2)] was used to deposit high-purity, polycrystalline palla dium films under low-pressure CVD conditions at high growth rates (100 0-4000 Angstrom/min) over a substrate temperature range of 80-200 degr ees C in the presence of H-2. Mixing of the precursor and H-2 streams near the substrate was required to avoid reactions of the precursor wi th H-2 at locations other than the substrate surface. Auger electron s pectroscopy (AES) showed that the films were impurity free when suffic ient H-2 was used. Resistivity values of 20 mu Omega cm were obtained at the higher deposition temperatures (similar to 200 degrees C) while high values of 50 mu Omega cm were observed at the lower deposition t emperatures (similar to 90 degrees C). The deposition rate was feed-ra te limited even at the lowest deposition temperatures and highest prec ursor delivery rates, suggesting that even higher deposition rates cou ld be obtained with higher feed rates. A high precursor conversion of 50-60 % was observed. The high surface reaction probability of Pd(hfac )2 in the presence of H-2 was reflected qualitatively by trench fill s tudies which showed a greater film thickness on the top of sub-microme ter trenches than in the bottom.