STRUCTURAL-PROPERTIES OF YTTRIA-STABILIZED ZIRCONIA FILMS GROWN ON SILICON(001) USING MOCVD

Authors
GARCIA G CASADO J LLIBRE J CIFRE J FIGUERAS A GALI S BASSAS J
Citation
G. Garcia et al., STRUCTURAL-PROPERTIES OF YTTRIA-STABILIZED ZIRCONIA FILMS GROWN ON SILICON(001) USING MOCVD, CHEMICAL VAPOR DEPOSITION, 3(2), 1997, pp. 91-96
Citations number
9
Categorie Soggetti
Materials Science, Coatings & Films","Materials Sciences, Composites",Electrochemistry,"Physics, Condensed Matter
Journal title
CHEMICAL VAPOR DEPOSITION → ACNP
ISSN journal
09481907
Volume
3
Issue
2
Year of publication
1997
Pages
91 - 96
Database
ISI
SICI code
0948-1907(1997)3:2<91:SOYZFG>2.0.ZU;2-S
Abstract
Layers of yttria-stabilized zirconia with different yttria content wer e prepared using MOCVD. The variation of the crystallographic paramete rs of the cell, as well as the residual stress of the deposits have be en studied by XRD as a function of yttria content. The maximum value o f the stress has been correlated with a deformation of the cell, in th e cubic domain, due to an intrinsic structural modification of the cry stals.