Communication: Semiconductor clusters, particularly gallium arsenide,
have potential applications in nonlinear optical devices. Special inte
rest is generated by the fact that their optical and electronic behavi
or depends on the size of the cluster. Direct evidence is presented fo
r the occurrence of hexagonal, i.e., wurtzite-type structure, GaAs in
clusters, whereas bulk GaAs has zincblende structure. High-resolution
transmission electron microscopy, atomic force microscopy and electron
diffraction results are reported and interpreted. Suggestions are mad
e for further work.