IMPLANTATION PROFILE AND POSITRONIUM FRACTION FOR LOW-ENERGY POSITRONS

Authors
SHRIVASTAVA SB AGRAWAL K
Citation
Sb. Shrivastava et K. Agrawal, IMPLANTATION PROFILE AND POSITRONIUM FRACTION FOR LOW-ENERGY POSITRONS, Physica status solidi. b, Basic research, 182(2), 1994, pp. 347-355
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. b, Basic research → ACNP
ISSN journal
03701972
Volume
182
Issue
2
Year of publication
1994
Pages
347 - 355
Database
ISI
SICI code
0370-1972(1994)182:2<347:IPAPFF>2.0.ZU;2-3
Abstract
The diffusion equation for positrons is solved subjected to two types of implantation profiles, namely, exponential and derivative of Gaussi an type. The positronium fraction obtained using the two profiles has been compared with experimental results. It is found that in general, the use of the derivative of the Gaussian-type profile gives better re sults. The maximum yield of the positronium as a function of temperatu re is predicted corresponding to the different orientations of the alu minum surface.