OPTICAL-BIAS EFFECT ON TRANSIENT ELECTRON-DRIFT MEASUREMENTS IN A-SI-H - IMPLICATIONS ON THE DISTRIBUTION AND CAPTURE CROSS-SECTIONS OF THEDANGLING BONDS

Citation
C. Longeaud et Jp. Kleider, OPTICAL-BIAS EFFECT ON TRANSIENT ELECTRON-DRIFT MEASUREMENTS IN A-SI-H - IMPLICATIONS ON THE DISTRIBUTION AND CAPTURE CROSS-SECTIONS OF THEDANGLING BONDS, Physical review. B, Condensed matter, 53(24), 1996, pp. 16133-16136
Citations number
15
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
53
Issue
24
Year of publication
1996
Pages
16133 - 16136
Database
ISI
SICI code
0163-1829(1996)53:24<16133:OEOTEM>2.0.ZU;2-1
Abstract
The previously reported echancement of the transient electron-drift si gnal in hydrogenated amorphous silicon under increasing optical bias, along with the puzzling independence from optical bias of the density of neutral dangling bonds at room temperature, are explained without t he need of introducing ad hoc slow-relaxation phenomena. Implications on the energy distribution of the dangling bonds and on their capture cross sections are given.