OPTICAL-BIAS EFFECT ON TRANSIENT ELECTRON-DRIFT MEASUREMENTS IN A-SI-H - IMPLICATIONS ON THE DISTRIBUTION AND CAPTURE CROSS-SECTIONS OF THEDANGLING BONDS
C. Longeaud et Jp. Kleider, OPTICAL-BIAS EFFECT ON TRANSIENT ELECTRON-DRIFT MEASUREMENTS IN A-SI-H - IMPLICATIONS ON THE DISTRIBUTION AND CAPTURE CROSS-SECTIONS OF THEDANGLING BONDS, Physical review. B, Condensed matter, 53(24), 1996, pp. 16133-16136
The previously reported echancement of the transient electron-drift si
gnal in hydrogenated amorphous silicon under increasing optical bias,
along with the puzzling independence from optical bias of the density
of neutral dangling bonds at room temperature, are explained without t
he need of introducing ad hoc slow-relaxation phenomena. Implications
on the energy distribution of the dangling bonds and on their capture
cross sections are given.