X-RAY-ABSORPTION SPECTROSCOPY OF COSI2

X-ray-absorption near-edge structure (XANES) spectra of thin-film CoSi 2 were measured at the Si K edge and Co L(3) edge using the total elec tron yield mode. The Si K-edge results for CoSi2 showed a dramatic red uction of intensity in the first broad Feature accompanied by a rise i n a relatively strong and sharp feature at higher binding energies whe n compared to XANES spectra for crystalline Si. We attribute these two features to the Si 1s photoelectron excitations to a broad Si 3p nonb onding band and a relatively narrow band of hybridized Si p-Co 3d anti bonding states, respectively. Analysis of the Co L(3)-edge white line spectra for CoSi2 reveals the appearance of a triple structure, which can be attributed to excitations to the unoccupied Co 3d nonbonding st ates and hybridized antibonding Co (3d,4s)-Si p states.