ELECTRON SUBBAND LEVELS OF N-TYPE DELTA-DOPED QUANTUM-WELLS UNDER INPLANE MAGNETIC-FIELDS

Self-consistent calculations of the electronic structure of center n-d elta-doped GaAs/AlxGa1-xAs quantum wells under in-plane magnetic field s are presented. The held B is varied up to 20 Tesla for different qua ntum well widths L(W) and sheet donor concentrations N-D. The magnetic field produces noticeable changes in the energy dispersions along an in-plane direction perpendicular to B. The effects of B are more prono unced for higher electronic subbands. It is found that the diamagnetic shifts increase with increasing L(W) and/or N-D. Contrarily to what h as been observed in modulation-doped quantum wells, in these delta-dop ed systems the electron energy dispersions keep the single conduction band minimum at the center of the Brillouin zone even for intense magn etic fields.