STRUCTURAL STABILIZATION INDUCED BY OXYGEN PLASMA POSTEXPOSURE OF SIO2-FILMS DEPOSITED FROM TETRAETHOXYSILANE

Authors
NOMA T SUGIURA T ISHII K OHKI Y HAMA Y
Citation
T. Noma et al., STRUCTURAL STABILIZATION INDUCED BY OXYGEN PLASMA POSTEXPOSURE OF SIO2-FILMS DEPOSITED FROM TETRAETHOXYSILANE, Journal of physics. D, Applied physics, 30(6), 1997, pp. 937-943
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
Journal of physics. D, Applied physics → ACNP
ISSN journal
00223727
Volume
30
Issue
6
Year of publication
1997
Pages
937 - 943
Database
ISI
SICI code
0022-3727(1997)30:6<937:SSIBOP>2.0.ZU;2-1
Abstract
Structural changes induced by post-exposure to oxygen plasma were stud ied for SiO2 films deposited at low temperatures (200-600 degrees C) b y plasma-enhanced chemical vapour deposition from tetraethoxysilane. C arbon- and water-related impurities remaining in the film are decompos ed by the oxygen plasma and then disappear. This brings about the disa ppearance of micropores and structural consolidation and stabilization , through which the degree of waterproofing improves, the relative die lectric constant decreases and the absorption edge shifts towards a hi gher energy.