EFFECT OF DIMETHYLAMINE ON THE CHEMICAL-VAPOR-DEPOSITION OF TIN FROM TETRAKIS(DIMETHYLAMIDO)TITANIUM AND AMMONIA

Citation
Bh. Weiller et Sd. Adamson, EFFECT OF DIMETHYLAMINE ON THE CHEMICAL-VAPOR-DEPOSITION OF TIN FROM TETRAKIS(DIMETHYLAMIDO)TITANIUM AND AMMONIA, Journal of the Electrochemical Society, 144(3), 1997, pp. 40-43
Citations number
23
Categorie Soggetti
Electrochemistry
ISSN journal
00134651
Volume
144
Issue
3
Year of publication
1997
Pages
40 - 43
Database
ISI
SICI code
0013-4651(1997)144:3<40:EODOTC>2.0.ZU;2-G
Abstract
The effect of HNMe(2) on the chemical vapor deposition of TiN from tet rakis(dimethylamido)titanium and NH3 was examined. The growth rates we re enhanced almost sevenfold with the addition of HNMe(2). However, HN Me(2) did not have a significant effect on the resistivity, compositio n, or conformality of the films under the conditions studied. The most likely explanation for the higher growth rates is suppression of reac tor wall loss reactions and enhancement of precursor transport to the substrate.