Bh. Weiller et Sd. Adamson, EFFECT OF DIMETHYLAMINE ON THE CHEMICAL-VAPOR-DEPOSITION OF TIN FROM TETRAKIS(DIMETHYLAMIDO)TITANIUM AND AMMONIA, Journal of the Electrochemical Society, 144(3), 1997, pp. 40-43
The effect of HNMe(2) on the chemical vapor deposition of TiN from tet
rakis(dimethylamido)titanium and NH3 was examined. The growth rates we
re enhanced almost sevenfold with the addition of HNMe(2). However, HN
Me(2) did not have a significant effect on the resistivity, compositio
n, or conformality of the films under the conditions studied. The most
likely explanation for the higher growth rates is suppression of reac
tor wall loss reactions and enhancement of precursor transport to the
substrate.