THERMODYNAMIC CONSIDERATIONS OF THE ROLE OF HYDROGEN IN SUBLIMATION GROWTH OF SILICON-CARBIDE

Authors
RABACK P NIEMINEN R YAKIMOVA R TUOMINEN M JANZEN E
Citation
P. Raback et al., THERMODYNAMIC CONSIDERATIONS OF THE ROLE OF HYDROGEN IN SUBLIMATION GROWTH OF SILICON-CARBIDE, Journal of the Electrochemical Society, 144(3), 1997, pp. 1024-1027
Citations number
11
Categorie Soggetti
Electrochemistry
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
144
Issue
3
Year of publication
1997
Pages
1024 - 1027
Database
ISI
SICI code
0013-4651(1997)144:3<1024:TCOTRO>2.0.ZU;2-D
Abstract
The purpose of this study was to investigate the thermodynamic consequ ences of added hydrogen to the sublimation growth process of silicon c arbide crystals. The results show that at each temperature there exist s a level of hydrogen that leads to a silicon-to-carbon ratio of unity . At typical growth temperatures the added hydrogen does not significa ntly affect the supersaturation ratio.