CHARACTERIZATION OF RUO2 THIN-FILMS PREPARED BY HOT-WALL METALLORGANIC CHEMICAL-VAPOR-DEPOSITION

RuO2 thin films were deposited on SiO2/Si substrate at low temperature s by hot-wall metallorganic chemical vapor deposition using the ruthen ocene and oxygen gas mixtures. The preferred orientation of films vari ed from (200) to (101) as the film thickness increases above 150 nm ir respective of the deposition conditions. RuO2 deposition reaction was controlled by gas-phase mass-transfer in these experiments. The film r esistivity increased with increasing oxygen flow rates. The increase o f film resistivity with increasing oxygen flow rates was due to the co ntribution of carrier concentration rather than that of carrier mobili ty. The film resistivity with increasing the annealing temperatures de creased because of densification of films.