KINETICS OF ENHANCED THERMAL-OXIDATION OF SILICON-CARBIDE USING AMORPHIZATION BY ION-IMPLANTATION

The kinetics of a thermal oxidation scheme with enhanced growth rate f or 6H-SiG is reported in this paper. This scheme is based upon the for mation of a thick amorphous layer created using high-dose ion implanta tion followed by thermal oxidation. The oxide thickness has been demon strated to be larger in the amorphized region, when compared to the un implanted (monocrystalline SiC) region, after dry oxidation. The oxide growth rate was parabolic in nature in the amorphized region, in cont rast to a mixed linear-parabolic growth rate observed for the monocrys talline region.