HETEROEPITAXIAL GROWTH OF C-AXIS-ORIENTED BATIO3-CE YBA2CU3O7-X BILAYER STRUCTURE ON SRTIO3(100) BY PULSED-LASER DEPOSITION/

Citation
Cl. Li et al., HETEROEPITAXIAL GROWTH OF C-AXIS-ORIENTED BATIO3-CE YBA2CU3O7-X BILAYER STRUCTURE ON SRTIO3(100) BY PULSED-LASER DEPOSITION/, Modern physics letters B, 11(2-3), 1997, pp. 73-79
Citations number
11
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Physycs, Mathematical
Journal title
ISSN journal
02179849
Volume
11
Issue
2-3
Year of publication
1997
Pages
73 - 79
Database
ISI
SICI code
0217-9849(1997)11:2-3<73:HGOCBY>2.0.ZU;2-V
Abstract
c-axis-oriented BaTiO3:Ce/YBa2Cu3O7-z bilayers have been epitaxially g rown on the SrTiO3(100) substrates by pulsed laser deposition. The cry stal structure and epitaxial orientation of the films have been analyz ed by the XRD theta/2 theta, omega and phi scans, and the results indi cate that the bilayer thin films have high degree of c-axis-oriented e pitaxial crystalline structure. The surface morphology of the thin fil ms was revealed by scanning electron microscopy (SEM). The ferroelectr icity of the BaTiO3:Ce thin films was verified by the P-E hysteresis l oop.