COMPUTER MODELING OF YBA2CU3O7 THICK-FILM DEPOSITION

This study presents a new type of Monte Carlo simulation method which allows us to investigate film growth under conditions comparable with experiments. To represent either beam-assisted deposition or thermal p rocessing the method combines assumptions used in collisional physics and in growth kinetics phenomena. Furthermore the physics is based on the analysis of the bonding in simple structures formed by cells of YB a2Cu3O7. For this analysis a semiempirical calculation of the extended Debye-Huckel approximation has been used. The results of the calculat ions are generally in agreement with experiments. Furthermore they sho w that the temperature dependence, which is peculiar to the YBCO growt h, can be understood at least in qualitative terms, as a special form of growth kinetics, intermediate between Lifshitz-Slyozov and percolat ion theory.