EFFECT OF LOCAL NONRADIATIVE RECOMBINATION ON TIME-RESOLVED ELECTROLUMINESCENCE OF P-N-JUNCTIONS

The effect of locally introduced dislocations on time-resolved electro luminescence (EL) in GaAlAs, GaAsP and GaP p-n structures is studied. The data indicate that the local nonradiative recombination results in non-exponential EL decay. A one-dimensional model of this effect, inv olving back-diffusion of injected electrons, their extraction into the n-region and local recombination at dislocations and the surface, is proposed. An analysis of EL decay, based on this model, enables to est imate the bulk lifetime of minority carriers and some parameters of lo cal nonradiative recombination.