WETTING TRANSITIONS OF HELIUM ON WEAK BINDING SUBSTRATES

Citation
P. Taborek et Je. Rutledge, WETTING TRANSITIONS OF HELIUM ON WEAK BINDING SUBSTRATES, Physica. B, Condensed matter, 197(1-4), 1994, pp. 283-289
Citations number
19
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09214526
Volume
197
Issue
1-4
Year of publication
1994
Pages
283 - 289
Database
ISI
SICI code
0921-4526(1994)197:1-4<283:WTOHOW>2.0.ZU;2-X
Abstract
We review recent experiments on the behavior of helium films adsorbed on alkali metal substrates, which bind He-4 more than an order of magn itude more weakly than conventional substrates such as graphite or gol d. The phase diagram of He-4 on cesium has several unique features whi ch have not been previously observed in any other system. At low tempe rature, He-4 does not wet cesium. At the wetting temperature T(w) cong ruent-to 2 K, a first order phase transition occurs, and it becomes po ssible to form thick films; there are large hysteresis effects near T( w) associated with the nucleation of the thin phase. For T < T(w), fil ms grow in a discontinuous way, with a first order thin-thick transiti on, which is known as prewetting. Prewetting can interfere with the us ual Kosterlitz-Thouless superfluid transition. The position of the pre wetting line can be tuned by varying the thickness of the cesium subst rate, or by doping the film with He-3.