Brazing of aluminum nitride (ALN), which is a good ceramic substrate i
n high power electronic applications, to copper was investigated using
In-base active fillers. Compositions of brazing fillers were chosen a
s In-1 wt. % Ti (IT1), In-19 wt. % Ag-2 wt. % Ti (LAT2), In-15 wt. % T
i (IT15), and In-52 wt. % Ag-20 wt. % Cu-3 wt. % Ti (ACIT3). Brazing,
operation was performed in vacuum at temperatures of 650-900 degrees C
. The brazing fillers showed good wetting on AlN and led to a strong b
ond between ALN and braze alloy. From the microstructural analysis, no
evidence of reaction layer was clearly found at the interface under t
he experimental brazing conditions. The composition of brazing alloy l
ayer changed into Cu9In4 phase due to the extensive dissolving of Cu f
rom base metal. Bond strength, measured by 4-point bend test, was obta
ined as high as 23-30 kgf for the Cu/AlN/Cu joint brazed with 1T15 and
ACIT3 fillers, and shown to be nearly constant even when the temperat
ure was varied within 700-800 degrees C. Most of the fracture appeared
to proceed through the interior of the AlN ceramic. Based on the expe
rimental results, it is believed that a strong bonding between AlN and
braze alloy can be achieved without the apparent forming of a Ti-rich
reaction layer at the interface.