ELECTRICAL AND STRUCTURAL-PROPERTIES OF SRTIO3 THIN-FILMS DEPOSITED BY PLASMA-ENHANCED METALORGANIC CHEMICAL-VAPOR-DEPOSITION

The microstructure and electrical properties were investigated for SrT iO3(STO) thin films deposited on Pt/Ti/SiO2/Si substrates by PEMOCVD. The SrF2 phase existing in the STO films deposited at 450 degrees C in fluences the dielectric constant, dissipation factor, and leakage curr ent density of STO films, The dielectric constant and dissipation fact or of STO films deposited at 500 degrees C were 210 and 0.018 at 100 k Hz, respectively, STO films were found to have paraelectric properties from the capacitance-voltage characteristics. Leakage current density of STO films at 500 degrees C was about 1.0 x 10(-8) A/cm(2) at an el ectric field of 70 kV/cm. The leakage current behaviors of STO films d eposited at 500 and 550 degrees C were controlled by Schottky emission with applied electric field.