2-PHONON ASSISTED INDIRECT EXCITON LUMINESCENCE IN ALPHA-ZNP2
Citation
K. Nakamura et al., 2-PHONON ASSISTED INDIRECT EXCITON LUMINESCENCE IN ALPHA-ZNP2, Journal of the Physical Society of Japan, 66(2), 1997, pp. 493-498
Categorie Soggetti
Physics
SICI code
0031-9015(1997)66:2<493:2AIELI>2.0.ZU;2-Z
Abstract
Luminescence spectra of tetragonal ZnP2 crystal are measured at variou
s temperatures. Below the indirect exciton threshold, about 30 intrins
ic indirect exciton luminescence bands are confirmed. Amidst the broad
bound exciton luminescence band, several emission bands appear even a
t 2 K. Intensities of these bands increase with increasing temperature
, especially in the high energy part of the band. They are also intrin
sic exciton luminescence caused through the indirect exciton transitio
n processes accompanied by two phonons at k(1) and k(2) conserving the
exciton wavevector; k(ex) = k(1) + k(2). Energy difference between th
e lowest edges of one- and two-phonon luminescence bands 59.4 meV is e
qual to the largest Raman shift energy. Phonons participating in the l
uminescence are mainly momentum conserving phonons appearing in the on
e-phonon luminescence bands and the ones at the Gamma point of the Bri
llouin zone.