GROWTH OF ULTRA-THIN ALN(0001) FILMS ON NIAL(111)

Citation
P. Gassmann et al., GROWTH OF ULTRA-THIN ALN(0001) FILMS ON NIAL(111), Solid state communications, 97(1), 1996, pp. 1-5
Citations number
19
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
97
Issue
1
Year of publication
1996
Pages
1 - 5
Database
ISI
SICI code
0038-1098(1996)97:1<1:GOUAFO>2.0.ZU;2-7
Abstract
The growth of ultra-thin AlN films on NiAl(111) has been studied by me ans of high resolution electron energy loss spectroscopy (HREELS), low energy electron diffraction (LEED) and Auger electron spectroscopy (A ES). The AlN films were grown upon adsorption and thermal decompositio n of NH3 on NiAl(111). HREEL spectra of the ordered AlN film show a Fu chs-Kliewer phonon mode at 860 cm(-1). This is in good agreement with theoretical spectra calculated on the base of the dielectric theory. T he electronic energy gap of the thin AlN films is determined to be E(g ) congruent to 6.0 +/- 0.2 eV. In addition, interface gap states at 1. 1 and 5.1 eV were found. The well-ordered AlN film renders a distinct LEED pattern, which exhibits hexagonal symmetry. The film grows in AlN [0001]\\NiAl[111] direction.