We study the interaction of Landau-level transitions with the Fabry-Pe
rot mode in a semiconductor microcavity. Using an analytical expressio
n for the description of the cavity mode we obtain analytical results
for the coupled-mode dispersion relation. The solution of the dispersi
on relation as a function of the magnetic field shows that the appeara
nce of the strong or weak coupling regime depends on the Landau level
index. A qualitative comparison to the experimental data by Tignon et
al. [Phys. Rev. Left. 74, 3967 (1995)] is given.