ION-BEAM MIXING OF CO-SI AND CO-SIO2 - A COMPARISON BETWEEN MONTE-CARLO SIMULATIONS AND EXPERIMENTS

The reaction of thin Co films with Si and SiO2 during ion-beam mixing with As and Ge was studied. Fluences and energies used were varied bet ween 2 . 10(14) and 5 . 10(15) cm(-2), and 15 and 200 keV, respectivel y. Concentration profiles of As, Ge, and Co were measured by SIMS; cro ss-sectional TEM-analysis was applied in order to investigate the meta l-silicon interface. By comparing theoretical and experimental profile s, it was possible to separate ballistic effects from thermal processe s in the Co-Si system. All theoretical profiles were calculated using the dynamic Monte-Carlo simulation program T-DYN. In case of CoSiO2 in teraction, it could be shown that the Co distribution in the oxide was only caused by recoil implantation and not by diffusion processes or reactions.