17GHZ BROAD-BAND AMPLIFIER WITH 25DB GAIN USING A 0.3-MU-M ALGAAS GAAS/ALGAAS HEMT TECHNOLOGY/

Authors
LANG M BERROTH M RIEGERMOTZER M WANG ZG HULSMANN A HOFFMANN P KAUFEL G KOHLER K RAYNOR B
Citation
M. Lang et al., 17GHZ BROAD-BAND AMPLIFIER WITH 25DB GAIN USING A 0.3-MU-M ALGAAS GAAS/ALGAAS HEMT TECHNOLOGY/, Electronics Letters, 31(23), 1995, pp. 1993-1995
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
23
Year of publication
1995
Pages
1993 - 1995
Database
ISI
SICI code
0013-5194(1995)31:23<1993:1BAW2G>2.0.ZU;2-Y
Abstract
A broadband amplifier chip based on AlGaAs/GaAs/AlGaAs quantum well FE Ts with 0.3 mu m gate length has been designed and fabricated. The amp lifier can be operated with single-ended or differential inputs with a n input resistance of 50 Omega. The output signals are differential wi th both internal load resistances at 100 Omega, the chip area is 1X1 m m(2), and the power consumption is similar to 375 mW.