25-100-DEGREES-C AUTOMATIC POWER-CONTROL FREE 600MBIT S MODULATION OF0.98-MU-M INGAAS/ALGAAS LASER FOR HIGH-SPEED DATA LINK/

Authors
CHIDA H FUKAGAI K MIYAZAKI T ISHIKAWA S
Citation
H. Chida et al., 25-100-DEGREES-C AUTOMATIC POWER-CONTROL FREE 600MBIT S MODULATION OF0.98-MU-M INGAAS/ALGAAS LASER FOR HIGH-SPEED DATA LINK/, Electronics Letters, 31(23), 1995, pp. 2006-2008
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
23
Year of publication
1995
Pages
2006 - 2008
Database
ISI
SICI code
0013-5194(1995)31:23<2006:2APF6S>2.0.ZU;2-P
Abstract
Highly stable, temperature insensitive laser diodes emitting at 0.98 m u m have bren developed. A low 2.3 mA threshold current was achieved a t 25 degrees C, and a high 0.48 W/A slope efficiency was achieved at 1 00 degrees C by optimising the waveguide structure, cavity length and front mirror reflectance. The power attentuation ratio from 25 to 100 degrees C was as low as -0.8 dB under a 30 mA drive current. The eye-o pening ratio was >94% up to 100 degrees C under automatic power contro l (APC) free 600 Mbit/s modulation and 2.3 mA DC bias.