LOW-THRESHOLD (1.7MA) AND HIGH-BANDWIDTH (14GHZ) 1.55-MU-M P-SUBSTRATE LASERS USING SEMIINSULATING HVPE REGROWTH

Authors
EVALDSSON P ERIKSSON U STALNACKE B LOURDUDOS S WALLIN J KJEBON O WILLEN B
Citation
P. Evaldsson et al., LOW-THRESHOLD (1.7MA) AND HIGH-BANDWIDTH (14GHZ) 1.55-MU-M P-SUBSTRATE LASERS USING SEMIINSULATING HVPE REGROWTH, Electronics Letters, 31(23), 1995, pp. 2012-2014
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
23
Year of publication
1995
Pages
2012 - 2014
Database
ISI
SICI code
0013-5194(1995)31:23<2012:L(AH(1>2.0.ZU;2-Q
Abstract
A 1.55 mu m p-substrate laser with a very low threshold current of 1.7 mA and a high bandwidth of 14 GHz is demonstrated. This combination o f low threshold current and high frequency response was accomplished b y using strained quantum wells and semi-insulating blocking layers gro wn by hydride-VPE. The authors believe this is the first report on the combination of a low threshold current and a high frequency response for a p-substrate laser. This component will be useful in high speed p arallel optical interconnects for future broadband systems.