EXPERIMENTAL DRAIN CURRENT DROP-BACK IN GAAS-MESFETS

Authors
FOBELETS K BORGHS G HEGARTY J
Citation
K. Fobelets et al., EXPERIMENTAL DRAIN CURRENT DROP-BACK IN GAAS-MESFETS, Electronics Letters, 31(23), 1995, pp. 2042-2044
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
23
Year of publication
1995
Pages
2042 - 2044
Database
ISI
SICI code
0013-5194(1995)31:23<2042:EDCDIG>2.0.ZU;2-2
Abstract
The authors demonstrate experimentally for the first time drain curren t drop-back at low drain voltages in GaAs MESFETs. This negative diffe rential conductance is caused by the Gunn effect. The pronounced curre nt drop-back is attributed to the special layer structure of the MESFE T.