NPN CONTROLLED LATERAL INSULATED GATE BIPOLAR-TRANSISTOR

Authors
QIN ZX NARAYANAN EMS
Citation
Zx. Qin et Ems. Narayanan, NPN CONTROLLED LATERAL INSULATED GATE BIPOLAR-TRANSISTOR, Electronics Letters, 31(23), 1995, pp. 2045-2047
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
23
Year of publication
1995
Pages
2045 - 2047
Database
ISI
SICI code
0013-5194(1995)31:23<2045:NCLIGB>2.0.ZU;2-N
Abstract
A fast switching npn controlled lateral insulated gate bipolar transis tor (NC-LIGBT) suitable for high voltage integrated circuits is propos ed. An open base npn transistor incorporated within the device strongl y influences its on-state and switching behaviour. Further, by varying the ratio between n(+)/p(+) regions or the concentration of the p wel l at the anode end, a suitable trade-off between forward drop and turn -off time can be easily realised by this single gated device.