SILICON DIRECT BONDING TECHNOLOGY EMPLOYING A REGULARLY GROOVED SURFACE

An intimate contact between two silicon wafers with mirror-polished sm ooth surfaces, one grooved and another smooth, was perfomed by direct bonding technology. High structural quality was realised not only at t he bonded interface but in the bulk. It was demonstrated that the arti ficial grooves were filled commensurate with dislocation gettering. Th e filling would be explained with mass-transport phenomena assisted by dislocation movement from initial contact boundaries toward groove su rfaces. The suggested method also yielded an intimate bonding not only between {111} wafers strongly misorientod and slightly inclined to {1 11} basal planes but even between {111} and {100} orientation wafers.