THE SIMEST - AN EST STRUCTURE WITHOUT PARASITIC THYRISTOR ACHIEVED USING SIMOX TECHNOLOGY

Authors
SRIDHAR S BALIGA BJ
Citation
S. Sridhar et Bj. Baliga, THE SIMEST - AN EST STRUCTURE WITHOUT PARASITIC THYRISTOR ACHIEVED USING SIMOX TECHNOLOGY, Electronics Letters, 31(23), 1995, pp. 2048-2050
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
23
Year of publication
1995
Pages
2048 - 2050
Database
ISI
SICI code
0013-5194(1995)31:23<2048:TS-AES>2.0.ZU;2-0
Abstract
A new EST structure, in which the lateral N-channel MOSFET is isolated from the thyristor bq using SIMOX technology to eliminate the parasit ic thyristor, is presented. This structure is experimentally demonstra ted to exhibit high voltage current saturation at large gate biases be yond the breakdown voltage of the lateral N-channel MOSFET and a lower on-state voltage drop than the dual channel EST.