THE INFLUENCE OF ION-IMPLANTATION CONDITIONS ON DEFECT FORMATION AND AMORPHIZATION IN SILICON

Authors
ZUKOVSKI PV KISZCZAK K MACZKA D LATUSZYNSKI A
Citation
Pv. Zukovski et al., THE INFLUENCE OF ION-IMPLANTATION CONDITIONS ON DEFECT FORMATION AND AMORPHIZATION IN SILICON, Radiation effects and defects in solids, 132(1), 1994, pp. 11-18
Citations number
16
Categorie Soggetti
Physics, Condensed Matter","Nuclear Sciences & Tecnology
Journal title
Radiation effects and defects in solids → ACNP
ISSN journal
10420150
Volume
132
Issue
1
Year of publication
1994
Pages
11 - 18
Database
ISI
SICI code
1042-0150(1994)132:1<11:TIOICO>2.0.ZU;2-H
Abstract
A phenomenological model describing the dependence of deformation proc esses on ion implantation conditions is preposed. Experimental results of defect formation as well as amorphisation in silicone for the impl antation with Ne+, ArC and Kr+ ions in the temperature interval of 150 -500 K and for ion current densities of 0.5 to 4.0 mu A/cm(2) are pres ented. An analysis of the experimental data within the framework of th e proposed model has been carried out. The basic characteristics of th e defects appearing at silicon amorphisation also have been defined.