RANDOM AND CHANNELED ION-DAMAGE DISTRIBUTIONS IN ZN-MICROSCOPY( IMPLANTED GAAS BY ELECTRON)

Some years ago the Transmission Electron Microscopy of High Resolution Replica (TEMHRR) has been successfully used to show the damage create d in Si single crystals by channeled In ions [1]. In the present paper the capacity of the same technique to reproduce the full in-depth dam age distribution in 10(14) Zn+/cm(2) implanted GaAs is shown. The used replica technique allows us to distinguish three zones in the damaged layer: starting from the implanted surface, the first one connected w ith the random damage; the second formed by channeled-ion traces; the third showing a damage peak due to the stop of the channeled ions. Com paring the obtained values of the random damaged layer thickness with those already reported in the literature, we found a good agreement.