A FINITE-ELEMENT MODEL FOR LIQUID-PHASE ELECTROEPITAXY

A finite element numerical simulation model for the liquid phase elect roepitaxial growth process of gallium arsenide is presented. The basic equations obtained from the fundamental principles of electrodynamics of continua, the constitutive equations for the liquid and solid,phas es derived from a rational thermodynamic theory, and the associated in terface and boundary conditions are presented for a two-dimensional ax isymmetric growth cell configuration. The field equations are solved n umerically by an adaptive finite element procedure. The effect of movi ng interfaces is taken into account. Numerical simulations are carried out for different convection levels by changing the value of the grav itational constant. Results show that convection has significant effec t on the growth process under normal gravity conditions and results in thickness non-uniformity of the grown layers, The thickness non-unifo rmity leads to curved interfaces of growth and dissolution, which enha nce convection.